Temperature dependence of gain saturation in multilevel quantum dot lasers
- Autor
- PARK, G1 ; SHCHEKIN, O. B1 ; DEPPE, D. G1
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, TX 78712-1084, United States - Fuente
IEEE journal of quantum electronics. 2000, Vol 36, Num 9, pp 1065-1071 ; ref : 19 ref
- CODEN
- IEJQA7
- ISSN
- 0018-9197
- Campo Científico
- Electronics; Optics; Telecommunications
- Editor
- Institute of Electrical and Electronics Engineers, New York, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Composé ternaire Courant seuil Dépendance température Etude expérimentale Etude théorique Gallium arséniure Indium arséniure Largeur raie Laser semiconducteur Point quantique Transition niveau énergie Al As Ga AlGaAs As Ga In Gain optique InGaAs Saturation gain Substrat GaAs
- Palabra clave (in)
- Ternary compounds Threshold current Temperature dependence Experimental study Theoretical study Gallium arsenides Indium arsenides Line widths Semiconductor lasers Quantum dots Energy-level transitions Optical gain
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B60 Laser optical systems: design and operation / 001B40B60L Efficiency, stability, gain, and other operational parameters
- Disciplina
- Physics : optics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 1460988
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/3.863959 
https://dx.doi.org/10.1109/3.863959
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