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Thin film sputtered silicon for silicon wafer bonding applications

Author
HURLEY, R. E1 ; GAMBLE, H. S1
[1] Northern Ireland Semiconductor Research Centre, School of Electrical & Electronic Engineering, The Queen's University of Belfast, Belfast BT9 5AH, United Kingdom
Conference title
The international symposium on ion implantation and other applications of ions and electrons - ION 2002, 10-13 June 2002, Kazimierz Dolny, Poland
Conference name
International Symposium on Ion Implantation and Other Applications of Ions and Electrons - ION 2002 (Kazimierz Dolny 2002-06-10)
Author (monograph)
MICHALAK, Leszek (Editor)1 ; MACZKA, Dariusz (Editor)1 ; ZUK, Jerzy (Editor)1
[1] Institute of Physics, Maria Curie-Sklodowska University, Pl Marii Curii Curie-Sklodowskiej 1, Lubin 20-031, Poland
Source

Vacuum. 2003, Vol 70, Num 2-3, pp 131-140, 10 p ; ref : 32 ref

CODEN
VACUAV
ISSN
0042-207X
Scientific domain
Metallurgy, welding; Physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Author keyword
Low temperature bonding Silicon Smart-cut Soi Sputter Thin film
Keyword (fr)
Délaminage Fabrication microélectronique Fixation pastille Pulvérisation cathodique Pulvérisation haute fréquence Recuit Technologie silicium sur isolant
Keyword (en)
Delamination Microelectronic fabrication Wafer bonding Cathodic sputtering Radiofrequency sputtering Annealing Silicon on insulator technology
Keyword (es)
Delaminación Fabricación microeléctrica Fijación pastilla Pulverización catódica Pulverización alta frecuencia Recocido Tecnología silicio sobre aislante
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14664643

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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