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Influence of the thickness on structural, optical and electrical properties of chemical bath deposited CdS thin films

Author
PANTOJA ENRIQUEZ, Joel1 ; MATHEW, Xavier1
[1] Solar Materials Department, Solar-Hydroyen-Fuel Cell Group, Centro de Investigación en Energía-UNAM, 62580, Temixco, Morelos, Mexico
Issue title
CANCUN 2001 - Nanoscale materials and devices
Author (monograph)
SEBASTIAN, P. J (Editor)1
[1] Solar-Hydrogen-Fuel Cell, Photovoltaic Systems Group Solar energy Laboratory, CIE-UNAM, Privada Xochicalco S/N, 62580 Temixco, Morelos, Mexico
Source

Solar energy materials and solar cells. 2003, Vol 76, Num 3, pp 313-322, 10 p ; ref : 23 ref

ISSN
0927-0248
Scientific domain
General chemistry, physical chemistry; Energy
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
CBD: Band gap CdS Photo response Structure
Keyword (fr)
Cadmium sulfure Cellule couche mince Cellule solaire Diffractométrie RX Dépôt bain chimique Epaisseur Propriété optique Propriété électrique Structure cristalline
Keyword (en)
Cadmium sulfide Thin film cell Solar cell X ray diffractometry Chemical bath deposition Thickness Optical properties Electrical properties Crystalline structure
Keyword (es)
Cadmio sulfuro Célula capa delgada Célula solar Difractometría RX Depósito baño químico Espesor Propiedad óptica Propiedad eléctrica Estructura cristalina
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
14676685

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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