Challenges, developments and applications of silicon deep reactive ion etching
- Author
- LAENNER, F1 ; URBAN, A1
[1] Robert Bosch GmbH, Corporate Research and Development, Microsystems and Thin Film Technology Department. Postfach 10 60 50, 70049 Stuttgart, Germany - Conference title
- Proceedings of the 28th International Conference on Micro- and Nano-Engineering, September 16-19, 2002, Lugano, Switzerland
- Conference name
- MNE 2002 International Conference on Micro- and Nano-Engineering (28 ; Lugano 2002-09-16)
- Author (monograph)
- BRUGGER, J (Editor); GOBRECHT, J (Editor); ROTHUIZEN, H (Editor); STAUFER, U (Editor); VETTIGER, P (Editor)
- Source
Microelectronic engineering. 2003, Vol 67-68, pp 349-355, 7 p ; ref : 16 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Anti-notching Balanced inductively coupled plasma High aspect ratio silicon High rate silicon etching Uniformity
- Keyword (fr)
- Application industrielle Diélectrique Fabrication microélectronique Gravure ionique réactive Matériel(informatique) Optimisation Passivation Pastille électronique Plasma couplé inductivement Rapport aspect Source plasma Technologie tranchée Vitesse gravure
- Keyword (en)
- Industrial application Dielectric materials Microelectronic fabrication Reactive ion etching Computer hardware Optimization Passivation Wafer Inductively coupled plasma Aspect ratio Plasma sources Trench technology Etching rate
- Keyword (es)
- Aplicación industrial Dieléctrico Fabricación microeléctrica Grabado iónico reactivo Material (informática) Optimización Pasivación Pastilla electrónica Relación dimensional Tecnología trinchera Velocidad grabado
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14862669
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0167-9317(03)00089-3 
https://dx.doi.org/10.1016/S0167-9317(03)00089-3
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