Tunnel current in organic field-effect transistors
- Author
- HOROWITZ, Gilles1
[1] ITODYS, Université Paris 7, 1 rue Guy de la Brosse, 75005 Paris, France - Conference title
- Organic Materials for Device Applications: Proceedings of Symposium F, E-MRS Spring Meeting 2002, June 18-21, 2002, Strasbourg, France
- Conference name
- Organic Materials for Device Applications: Symposium F, E-MRS Spring Meeting 2002 (Strasbourg 2002-06-18)
- Author (monograph)
- SCHMEISSER, D (Editor)1 ; RIESS, W (Editor)2
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
[1] BTU Cottbus, Germany
[2] IBM Research, Switzerland - Source
Synthetic metals. 2003, Vol 138, Num 1-2, pp 101-105, 5 p ; ref : 23 ref
- CODEN
- SYMEDZ
- ISSN
- 0379-6779
- Scientific domain
- Electronics; Condensed state physics; Polymers, paint and wood industries
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Field-effect mobility Organic semiconductors Polycrystalline films Tunneling
- Keyword (fr)
- Composé organique semiconducteur Composé organique Effet tunnel Polycristal Transistor effet champ
- Keyword (en)
- Semiconducting organic compounds Organic compounds Tunnel effect Polycrystal Field effect transistor
- Keyword (es)
- Compuesto orgánico Efecto túnel Policristal Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14887671
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0379-6779(02)01298-5 
https://dx.doi.org/10.1016/S0379-6779(02)01298-5
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