Growth of GaN on ZrB₂ substrate by metal-organic vapor phase epitaxy

Author

TOMIDA, Yoshihito¹ ; NITTA, Shugo¹ ; KAMIYAMA, Satoshi¹ ; AMANO, Hiroshi¹ ; AKASAKI, Isamu¹ ; OTANI, Shigeki² ; KINOSHITA, Hiroyuki³ ; RONG LIU⁴ ; BELL, Abigail⁴ ; PONCE, Fernando A⁴
[1] Faculty of Science and Technology, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
[2] National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
[3] Kyocera Corporation, 1166-6 Nagatanino, Hebimizo-cho, Youkaichi 527-8555, Japan
[4] Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, United States

Conference title

ISCSI-4: Proceedings of the Fourth International Symposium on the Control of Semiconductor Interfaces, Karuizawa, Japan, October 21-25, 2002

Conference name

ISCSI-4 International Symposium on the Control of Semiconductor Interfaces (4 ; Karuizawa 2002-10-21)

Author (monograph)

HATTORI, T (Editor)¹ ; OKUMURA, T (Editor)² ; HIRAKI, A (Editor)³
Japan Society of Promotion of Science ; Division 154 Control of Semiconductor Interfaces, Japan (Funder/Sponsor)
[1] Musashi Institute of Technology, Japan
[2] Tokyo Metropolitan University, Japan
[3] Kochi University of Technology, Japan

Source

Applied surface science. 2003, Vol 216, Num 1-4, pp 502-507, 6 p ; ref : 12 ref

ISSN

0169-4332

Scientific domain

General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics

Publisher

Elsevier Science, Amsterdam

Publication country

Netherlands

Document type

Conference Paper

Language

English

Author keyword

GaN MOVPE New substrate Nitridation ZrB2

Keyword (fr)

Caractéristique courant tension Croissance film Gallium nitrure Microscopie électronique balayage Microscopie électronique transmission Méthode MOVPE Structure interface B Zr Composé minéral Ga N GaN Métal transition composé Zirconium diborure ZrB2

Keyword (en)

IV characteristic Film growth Gallium nitrides Scanning electron microscopy Transmission electron microscopy MOVPE method Interface structure

Keyword (es)

Método MOVPE

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35C Interface structure and roughness

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Pacs

6835C Interface structure and roughness

Pacs

7361 Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots)

Pacs

8115K Vapor phase epitaxy; growth from vapor phase

Discipline

Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

14906026

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS