Thickness dependence of resistivity for Cu films deposited by ion beam deposition
- Author
- LIM, J.-W1 ; MIMURA, K1 ; ISSHIKI, M1
[1] Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan - Source
Applied surface science. 2003, Vol 217, Num 1-4, pp 95-99, 5 p ; ref : 11 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Copper Ion beam Resistivity Thickness Thin films
- Keyword (fr)
- Conductivité électrique Couche mince Cuivre Diffusion joint grain Diffusion surface Diffusion électron Effet dimensionnel Epaisseur Méthode IBAD Cu Métal transition
- Keyword (en)
- Electrical conductivity Thin films Copper Grain boundary diffusion Surface scattering Electron scattering Size effect Thickness Ion beam assisted deposition method
- Keyword (es)
- Difusión electrón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61A Metals and metallic alloys
- Discipline
- Metals. Metallurgy Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14939219
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(03)00522-1 
https://dx.doi.org/10.1016/S0169-4332(03)00522-1
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