Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20
- Author
- MARQUET, H1 ; MERLE, J.-C1 ; GIES, J.-G1
[1] Institut de Physique et Chimie des Matériaux de Strasbourg, Groupe d'Optique Nonlinéaire et d'Optoélectronique, Unité mixte 380046 CNRS-ULP-EHICS, 23 rue du Loess, Strasbourg, 67037, France - Source
Optical materials (Amsterdam). 2000, Vol 14, Num 4, pp 277-285 ; ref : 33 ref
- ISSN
- 0925-3467
- Scientific domain
- Optics; Condensed state physics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bismuth oxyde Blanchiment Composé ternaire Etude expérimentale Germanium oxyde Matériau optique Matériau photosensible Photochromisme Piège électron Transfert charge Bi Ge O Bi12GeO20
- Keyword (en)
- Bismuth oxides Bleaching Ternary compounds Experimental study Germanium oxides Optical materials Photosensitive material Photochromism Electron traps Charge transfer
- Keyword (es)
- Material fotosensible Transferencia carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70G Light-sensitive materials
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1494867
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0925-3467(00)00005-7 
https://dx.doi.org/10.1016/S0925-3467(00)00005-7
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