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A simple route to Ohmic contacts on low boron-doped CVD diamond

Author
ALEXANDER, Matthew S1 ; LATTO, Matthew N1 ; MAY, Paul W1 ; RILEY, D. Jason1 ; PASTOR-MORENO, G1
[1] School of Chemistry, University of Bristol, Cantock's Close, Bristol BS8 1TS, United Kingdom
Source

Diamond and related materials. 2003, Vol 12, Num 9, pp 1460-1462, 3 p ; ref : 11 ref

ISSN
0925-9635
Scientific domain
Crystallography
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Keyword (fr)
Addition bore Caractéristique courant tension Contact métal semiconducteur Contact ohmique Diamant Dopage Dépôt chimique phase vapeur Etude expérimentale Impureté Microscopie optique Microscopie électronique balayage Polycristal Titane C Ti
Keyword (en)
Boron additions IV characteristic Metal-semiconductor contacts Ohmic contacts Diamonds Doping CVD Experimental study Impurities Optical microscopy Scanning electron microscopy Polycrystals Titanium
Keyword (es)
Doping
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40N Metal-nonmetal contacts

Pacs
7340N Metal-nonmetal contacts

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
15073869

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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