Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding
- Autor
- REZNICEK, A1 ; SCHOLZ, R1 ; SENZ, S1 ; GÖSELE, U1
[1] Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany - Titulo de la conferencia
- EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland
- Nombre de la conferencia
- EMC 2002 International Conference on Electron Microscopy of Solids (11 ; Krynica 2002-05-19)
- Autor ( monografía)
- BIELANSKA, Elzbieta (Editor)1 ; DUTKIEWICZ, Jan (Editor)1 ; ZIEBA, Pawel (Editor)1
Polish Materials Society ; State Committee for Scientific Research, Poland (Funder/Sponsor)
Polish Academy of Sciences ; Committee on Materials Science ; Microscopy Section, Poland (Funder/Sponsor)
[1] Polish Academy of Sciences, Institute of Metallurgy and Materials Science, Cracow, Poland - Fuente
Materials chemistry and physics. 2003, Vol 81, Num 2-3, pp 277-280, 4 p ; ref : 6 ref
- CODEN
- MCHPDR
- ISSN
- 0254-0584
- Campo Científico
- Chemistry; Metallurgy, welding; Physics
- Editor
- Elsevier, Lausanne
- País de la publicación
- Switzerland
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave (fr)
- Etude comparative Fixation pastille Interface Microscopie électronique transmission Microscopie électronique Silicium
- Palabra clave (in)
- Comparative study Wafer bonding Interfaces Transmission electron microscopy Electron microscopy Silicon
- Palabra clave (es)
- Estudio comparativo
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 15085340
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0254-0584(02)00601-6 
https://dx.doi.org/10.1016/S0254-0584(02)00601-6
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Materials chemistry and physics\";s:9:\"\u0000*\u0000stitle\";s:17:\"Mater. chem. phys\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"81\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"277\";s:8:\"\u0000*\u0000epage\";s:3:\"280\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0254-0584\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"REZNICEK\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:9:\"SCHOLZ, R\";i:1;s:7:\"SENZ, S\";i:2;s:10:\"G\u00d6SELE, U\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCHPDR\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:108:\"EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland\";s:8:\"\u0000*\u0000title\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Materials chemistry and physics\";s:9:\"\u0000*\u0000stitle\";s:17:\"Mater. chem. phys\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"81\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"277\";s:8:\"\u0000*\u0000epage\";s:3:\"280\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0254-0584\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"REZNICEK\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:9:\"SCHOLZ, R\";i:1;s:7:\"SENZ, S\";i:2;s:10:\"G\u00d6SELE, U\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCHPDR\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:108:\"EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland\";s:8:\"\u0000*\u0000title\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Materials chemistry and physics\";s:9:\"\u0000*\u0000stitle\";s:17:\"Mater. chem. phys\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"81\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"277\";s:8:\"\u0000*\u0000epage\";s:3:\"280\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0254-0584\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"REZNICEK\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:9:\"SCHOLZ, R\";i:1;s:7:\"SENZ, S\";i:2;s:10:\"G\u00d6SELE, U\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCHPDR\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:108:\"EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland\";s:8:\"\u0000*\u0000title\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Materials chemistry and physics\";s:9:\"\u0000*\u0000stitle\";s:17:\"Mater. chem. phys\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"81\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"277\";s:8:\"\u0000*\u0000epage\";s:3:\"280\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0254-0584\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"REZNICEK\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:9:\"SCHOLZ, R\";i:1;s:7:\"SENZ, S\";i:2;s:10:\"G\u00d6SELE, U\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCHPDR\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:108:\"EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland\";s:8:\"\u0000*\u0000title\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0254-0584(02)00601-6\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Materials chemistry and physics\";s:9:\"\u0000*\u0000stitle\";s:17:\"Mater. chem. phys\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"81\";s:8:\"\u0000*\u0000issue\";s:3:\"2-3\";s:8:\"\u0000*\u0000spage\";s:3:\"277\";s:8:\"\u0000*\u0000epage\";s:3:\"280\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0254-0584\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"REZNICEK\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:9:\"SCHOLZ, R\";i:1;s:7:\"SENZ, S\";i:2;s:10:\"G\u00d6SELE, U\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCHPDR\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:108:\"EMC 2002: XIth International Conference on Electron Microscopy of Solids, May 19-23, 2002 in Krynica, Poland\";s:8:\"\u0000*\u0000title\";s:119:\"Comparative TEM study of bonded silicon\/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
