Entwicklung eines Präparationsverfahrens für multikristalline Silizium-Wafer
- Otro titulo
- Developing a preparation technique for multicrystalline silicon wafers (en)
- Autor
- SCHABERGER-ZIMMERMANN, E1 ; SCHWEIZER, S2 ; APEL, M2
[1] Giesserei-Institut der RWTH Aachen, Intzestrasse 5, 52072 Aachen, Germany
[2] ACCESS e.V., Intzestrasse 5, 52072 Aachen, Germany - Fuente
Praktische Metallographie. = Practical Metallography. 2003, Vol 40, Num 9, pp 443-453, 11 p ; ref : 3 ref
- CODEN
- PMTLA5
- ISSN
- 0032-678X
- Campo Científico
- Metallurgy, welding
- Editor
- Hanser, München
- País de la publicación
- Germany
- Tipo de documento
- Article
- Idioma
- English; German
- Palabra clave (fr)
- Attaque chimique Etude expérimentale Microstructure Métallographie Pastille électronique Polycristal Préparation surface Préparation échantillon Silicium
- Palabra clave (in)
- Chemical etching Experimental study Microstructure Metallography Wafers Polycrystals Surface preparation Sample preparation Silicon
- Palabra clave (es)
- Ataque químico Preparación superficie
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 15136498
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Acceso al documento
Install on your browser
DOI
10.1515/pm-2003-400904 
https://dx.doi.org/10.1515/pm-2003-400904
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Praktische Metallographie\";s:9:\"\u0000*\u0000stitle\";s:16:\"Prakt. Metallogr\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"40\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"453\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0032-678X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:21:\"SCHABERGER-ZIMMERMANN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"SCHWEIZER, S\";i:1;s:7:\"APEL, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PMTLA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:8:\"\u0000*\u0000place\";s:8:\"M\u00fcnchen\";s:6:\"\u0000*\u0000pub\";s:6:\"Hanser\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"11\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Panist
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Praktische Metallographie\";s:9:\"\u0000*\u0000stitle\";s:16:\"Prakt. Metallogr\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"40\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"453\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0032-678X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:21:\"SCHABERGER-ZIMMERMANN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"SCHWEIZER, S\";i:1;s:7:\"APEL, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PMTLA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:8:\"\u0000*\u0000place\";s:8:\"M\u00fcnchen\";s:6:\"\u0000*\u0000pub\";s:6:\"Hanser\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"11\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Istex
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Acceso mediante Unpaywall
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Praktische Metallographie\";s:9:\"\u0000*\u0000stitle\";s:16:\"Prakt. Metallogr\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"40\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"453\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0032-678X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:21:\"SCHABERGER-ZIMMERMANN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"SCHWEIZER, S\";i:1;s:7:\"APEL, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PMTLA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:8:\"\u0000*\u0000place\";s:8:\"M\u00fcnchen\";s:6:\"\u0000*\u0000pub\";s:6:\"Hanser\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"11\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Europe PubMed Central
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Praktische Metallographie\";s:9:\"\u0000*\u0000stitle\";s:16:\"Prakt. Metallogr\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"40\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"453\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0032-678X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:21:\"SCHABERGER-ZIMMERMANN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"SCHWEIZER, S\";i:1;s:7:\"APEL, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PMTLA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:8:\"\u0000*\u0000place\";s:8:\"M\u00fcnchen\";s:6:\"\u0000*\u0000pub\";s:6:\"Hanser\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"11\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante Base Search
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1515\/pm-2003-400904\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Praktische Metallographie\";s:9:\"\u0000*\u0000stitle\";s:16:\"Prakt. Metallogr\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:2:\"40\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"453\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0032-678X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:21:\"SCHABERGER-ZIMMERMANN\";s:10:\"\u0000*\u0000aufirst\";s:1:\"E\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:2:{i:0;s:12:\"SCHWEIZER, S\";i:1;s:7:\"APEL, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PMTLA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:78:\"Entwicklung eines Pr\u00e4parationsverfahrens f\u00fcr multikristalline Silizium-Wafer\";s:8:\"\u0000*\u0000place\";s:8:\"M\u00fcnchen\";s:6:\"\u0000*\u0000pub\";s:6:\"Hanser\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"11\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Acceso mediante arXiv
