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Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst

Author
GAO, P. X1 ; DING, Y1 ; WANG, Z. L1
[1] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
Source

Nano letters (Print). 2003, Vol 3, Num 9, pp 1315-1320, 6 p ; ref : 29 ref

ISSN
1530-6984
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Alignement Commande processus Croissance cristalline en phase vapeur Dépôt physique phase vapeur Epitaxie Etain Etude expérimentale Hétérojonction Mécanisme croissance Nanocristal Nanofil Orientation cristalline Orientation préférentielle Réaction catalytique Semiconducteur bande interdite large Zinc oxyde O Zn ZnO Composé minéral Métal transition composé
Keyword (en)
Alignment Process control Crystal growth from vapors Physical vapor deposition Epitaxy Tin Experimental study Heterojunctions Growth mechanism Nanocrystal Nanowires Crystal orientation Preferred orientation Catalytic reaction Wide band gap semiconductors Zinc oxides Inorganic compounds Transition element compounds
Keyword (es)
Mecanismo crecimiento Nanocristal Orientación preferencial Reacción catalítica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
15145206

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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