Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution
- Author
- BEJI, L1 ; SFAXI, L2 ; ISMAIL, B2 ; ZGHAL, S3 ; HASSEN, F2 ; MAAREF, H2
[1] Laboratoire de Physique et de Chimie des Interfaces, Faculté des Sciences, 5019 Monastir, Tunisia
[2] Laboratoire de physique des Semiconducteurs, Faculté des Sciences, 5019 Monastir, Tunisia
[3] Laboratoire de physique des Matériaux, Faculté des Sciences, 5019 Monastir, Tunisia - Source
Microelectronics journal. 2003, Vol 34, Num 10, pp 969-974, 6 p ; ref : 28 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 78.20.e 78.30.Hv 78.55.Cr 81.60.Cp Gallium arsenide Electrochemical etching Photoluminescence Quantum confinement
- Keyword (fr)
- Confinement Effet quantique Figure attaque Gallium arséniure Gravure électrochimique Matériau poreux Microstructure Photoluminescence Semiconducteur type p Traitement surface 8165C As Ga GaAs
- Keyword (en)
- Confinement Quantum effect Etch pits Gallium arsenides Electrochemical etching Porous materials Microstructure Photoluminescence p-type conductors Surface treatments
- Keyword (es)
- Efecto cuántico Grabado electroquímico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15160322
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0026-2692(03)00183-6 
https://dx.doi.org/10.1016/S0026-2692(03)00183-6
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