Effects of aluminum on the properties of p-type Cu-Al-O transparent oxide semiconductor prepared by reactive co-sputtering
- Author
- CHIN HOCK ONG1 ; HAO GONG1
[1] Department of Materials Science, National University of Singapore, 10 Kent Ridge Crescent, Singapore - Conference title
- Proceedings of the Third International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-3), April 10-11, 2003, Tokyo, Japan
- Conference name
- TOEO-3 International Symposium on Transparent Oxide Thin Films for Electronics and Optics (3 ; Tokyo 2003-04-10)
- Author (monograph)
- HOSONO, Hideo (Editor)1 ; GINLEY, David S (Editor)2 ; ICHINOSE, Noboru (Editor)3 ; SHIGESATO, Yuzo (Editor)4
[1] Tokyo Inst. Tech., Japan
[2] NREL, United States
[3] Waseda Univ., Japan
[4] Aoyama Gakuin Univ., Japan - Source
Thin solid films. 2003, Vol 445, Num 2, pp 299-303, 5 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- CuAlO2 Oxides Sputtering p-Type
- Keyword (fr)
- Aluminium oxyde Bande interdite Composé ternaire Couche mince Cristallisation Cuivre oxyde Diffraction RX Epaisseur Etude expérimentale Facteur transmission Limite absorption Magnétron Matériau transparent Microscopie force atomique Microscopie électronique balayage Pulvérisation haute fréquence Pulvérisation réactive Semiconducteur bande interdite large Al Cu O CuAlO Composé minéral Métal transition composé
- Keyword (en)
- Aluminium oxides Energy gap Ternary compounds Thin films Crystallization Copper oxides XRD Thickness Experimental study Transmittance Absorption edge Magnetrons Transparent material Atomic force microscopy Scanning electron microscopy Radiofrequency sputtering Reactive sputtering Wide band gap semiconductors Inorganic compounds Transition element compounds
- Keyword (es)
- Factor transmisión Material transparente Pulverización alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pacs
- 7840F Semiconductors
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15354750
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0040-6090(03)01175-1 
https://dx.doi.org/10.1016/S0040-6090(03)01175-1
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