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DLTS Studies of high-temperature electron irradiated Cz n-Si

Author
NEIMASH, V1 ; KRAS'KO, M1 ; CLAUWS, P4 ; KRAITCHINSKII, A1 ; VOYTOVYCH, V1 ; TISHCHENKO, V1 ; SIMOEN, E2 ; RAFI, J. M2 ; CLAEYS, C2 3 ; VERSLUYS, J4 ; DE GRYSE, O4
[1] Institute of Physics NANU, 46 Nauki Av., Kiev, Ukraine
[2] IMEC, Kapeldreef 75, 3001 Leuven, Belgium
[3] E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven, Belgium
[4] Dept. Solid-State Sciences, Ghent University, Krijgslaan 281 S1, 9000 Gent, Belgium
Source

Physica status solidi. A. Applied research. 2004, Vol 201, Num 3, pp 509-516, 8 p ; ref : 17 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Centre donneur DLTS Défaut complexe Défaut irradiation Effet rayonnement Etat défaut Etude expérimentale Faisceau électron Niveau profond Silicium Traitement thermique Si
Keyword (en)
Donor center DLTS Complex defect Irradiation defect Radiation effects Defect states Experimental study Electron beams Deep level Silicon Heat treatments
Keyword (es)
Centro dador Defecto complejo Defecto irradiación Nivel profundo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors

Pacs
7155C Elemental semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
15526300

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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