n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection
- Author
- JEONG, I.-S1 ; KIM, J. H1 ; PARK, Hyung-Ho2 ; SEONGIL IM1
[1] Institute of Physics and Applied Physics, Yonsei University, 134 shinchon-dong, Sudaemoon-ku, Seoul 120-749, Korea, Republic of
[2] Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea, Republic of - Conference title
- Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, April 28-May 2, 2003
- Conference name
- International Conference on Metallurgical Coatings and Thin Films (30 ; San Diego, California 2003-04-28)
- Author (monograph)
- MATTHEWS, Allan (Editor)1 ; MARCHEV, Krassimir (Editor)2 ; PATSCHEIDER, Joerg (Editor)3 ; PAULEAU, Yves (Editor)4
AVS Science and Technology Society ; Advanced Surface Engineering Division, United States (Funder/Sponsor)
[1] Department of Engineering Materials, The University of Sheffield, Sir Robert Hadfield Bldg, Mappin St., Sheffield, SI 3JD, United Kingdom
[2] The Gillette Company, Gillette Advanced Technology Center, 37 A Street, Needham, MA 02492-9120, United States
[3] EMPA, Surface- and Joining Technology Ueberlandstr. 129, Duebendorf, Switzerland
[4] National Polytechnic Institute of Grenoble, CNRS-LEMD, B.P. 166, 25 rue des Martyrs, 38042 Grenoble, France - Source
Thin solid films. 2004, Vol 447-48, pp 111-114, 4 p ; ref : 8 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Aluminum oxide Photodiode Reflectance Zinc oxide
- Keyword (fr)
- Aluminium oxyde Caractéristique courant tension Composé binaire Couche mince Courant photoélectrique Etude expérimentale Facteur réflexion Photodiode Photodétecteur Semiconducteur II-VI Silicium Spectre UV Zinc oxyde Al O AlOx O Zn Si ZnO Composé minéral Métal transition composé
- Keyword (en)
- Aluminium oxide Voltage current curve Binary compound Thin film Photoelectric current Experimental study Reflectance Photodiode Photodetector II-VI semiconductors Silicon Ultraviolet spectrum Zinc oxide Inorganic compound Transition element compounds
- Keyword (es)
- Aluminio óxido Característica corriente tensión Compuesto binario Capa fina Corriente fotoeléctrica Estudio experimental Coeficiente reflexión Fotodiodo Fotodetector Silicio Espectro UV Zinc óxido Compuesto inorgánico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pacs
- 7840F Semiconductors
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15555058
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2003.09.032 
https://dx.doi.org/10.1016/j.tsf.2003.09.032
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