Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate
- Author
- LEE, C1 ; WITKOWSKI, L1 ; MUIR, M1 ; TSERNG, H. Q1 ; SAUNIER, P1 ; WANG, H2 ; YANG, J2 ; KHAN, M. A2
[1] TriQuint Semiconductor Texas, 500 W. Renner Rd., Richardson TX 75080, United States
[2] Department of Electrical Engineering, University of S. Carolina, Columbia, S. Carolina 29208, United States - Conference title
- IEEE Lester Eastman conference on high performance devices (Newark DE, 6-8 August 2002)
- Conference name
- IEEE Lester Eastman conference on high performance devices (Newark DE 2002-08-06)
- Author (monograph)
- Leoni, Robert E (Editor)
IEEE Electron Device Society, United States (Organiser of meeting)
IEEE Microwave Theory and Techniques Society, United States (Organiser of meeting) - Source
IEEE Lester Eastman conference on high performance devices (Newark DE, 6-8 August 2002). 2002, pp 436-442, 7 p ; ref : 6 ref
- ISBN
- 0-7803-7478-9
- Scientific domain
- Electronics
- Publisher
- IEEE, Piscataway NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé ternaire Courant drain Endommagement Essai Etude comparative Evaluation performance Fiabilité Gallium nitrure Puissance sortie Régime signal faible Schéma équivalent Silicium carbure Tension drain Transconductance Transistor mobilité électron élevée Al Ga N AlGaN C Si Ga N GaN SiC
- Keyword (en)
- Aluminium nitride Binary compound Ternary compound Drain current Damaging Test Comparative study Performance evaluation Reliability Gallium nitride Output power Small signal behavior Equivalent circuit Silicon carbide Drain voltage Transconductance High electron mobility transistor
- Keyword (es)
- Aluminio nitruro Compuesto binario Compuesto ternario Corriente dren Deterioración Ensayo Estudio comparativo Evaluación prestación Fiabilidad Galio nitruro Potencia salida Régimen señal débil Esquema equivalente Silicio carburo Tensión dren Transconductancia Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15619083
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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