Formation of Si/Ge nanostructures at surfaces by self-organization : Nanostructured surfaces III
- Author
- VOIGTLÄNDER, Bert1 ; KAWAMURA, Midori1 ; PAUL, Neelima1 ; CHEREPANOV, Vasily1
[1] Institut für Schichten und Grenzflächen (ISG), and cni-Centre of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany - Source
Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 17, pp S1535-S1551 ; ref : 20 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Autoorganisation Cinétique Croissance latérale Défaut Effet tunnel Epitaxie Facettage Germanium Microscopie tunnel balayage Mécanisme croissance Nanofil Nanostructure Reconstruction surface Semiconducteur Silicium Structure surface Structure îlot Taux croissance 63 Ge Si
- Keyword (en)
- Self organization Kinetics Lateral growth Defects Tunnel effect Epitaxy Faceting Germanium Scanning tunneling microscopy Growth mechanism Nanowires Nanostructures Surface reconstruction Semiconductor materials Silicon Surface structure Island structure Growth rate
- Keyword (es)
- Autoorganización Crecimiento lateral Facetage Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15712536
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/16/17/006 
https://dx.doi.org/10.1088/0953-8984/16/17/006
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