Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- Author
- RIM, K1 ; NARASIMHA, S2 ; LONGSTREET, M2 ; MOCUTA, A2 ; CAI, J1
[1] IBM Semiconductor Research and Development Center (SRDC), T. J. Watson Research Center, Yorktown Heights, NY, United States
[2] Microelectronics Division, Hopewell Junction, NY, United States - Conference title
- Electron devices (San Francisco CA, 8-11 December 2002, technical digest)
- Conference name
- IEDm : international electron devices meeting (San Francisco CA 2002-12-08)
- Author (monograph)
- IEEE Electronic Devices Society, United States (Organiser of meeting)
- Source
Electron devices (San Francisco CA, 8-11 December 2002, technical digest). 2002, pp 43-46, 4 p ; ref : 7 ref
- ISBN
- 0-7803-7462-2
- Scientific domain
- Electronics
- Publisher
- IEEE, Piscataway NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Dopage Transistor MOSFET
- Keyword (en)
- Doping MOSFET
- Keyword (es)
- Doping
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15785807
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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