Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric
- Author
- WANG, Q1 2 ; SONG, Z. T1 ; LIU, W. L1 ; LIN, C. L1 ; WANG, T. H2
[1] The Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
[2] Institute of Physics, Chinese Academy of Sciences, Beijing, China - Source
Applied surface science. 2004, Vol 230, Num 1-4, pp 8-11, 4 p ; ref : 14 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 61.46.+w 73.63.Bd Ag nanodots 81.07.Ta 81.16.Dn Al2O3 gate dielectrics Electron storage effect
- Keyword (fr)
- Aluminium oxyde Argent Capacité électrique Composé minéral Dispositif à mémoire Evaporation faisceau électronique Evaporation sous vide Métal transition Nanocristal Recuit Silicium Structure MIS Ag Al O Al2O3 Si
- Keyword (en)
- Aluminium oxides Silver Capacitance Inorganic compounds Memory devices Electron beam evaporation Vacuum evaporation Transition elements Nanocrystal Annealing Silicon MIS structures
- Keyword (es)
- Nanocristal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15801396
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2004.02.045 
https://dx.doi.org/10.1016/j.apsusc.2004.02.045
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