Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching
- Author
- KIM, D.-A1 ; IM, S.-I2 ; WHANG, C. M1 ; CHO, W.-S1 ; YOO, Y-C1 ; CHO, N.-H1 ; KIM, J.-G3 ; KWON, Y.-J3
[1] Department of Materials Science and Engineering, Inha University, Inchon 402-751, Korea, Republic of
[2] Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea, Republic of
[3] Institute of Advanced Materials, Inha University, Inchon 402-751, Korea, Republic of - Source
Applied surface science. 2004, Vol 230, Num 1-4, pp 125-130, 6 p ; ref : 18 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Aging Etching Nano-crystallite Photoluminescence Porous silicon
- Keyword (fr)
- Agrégat Déplacement raie Déplacement vers le bleu Epaisseur Gravure électrochimique Matériau poreux Oxydation Photoluminescence Semiconducteur type p Silicium Vieillissement Si
- Keyword (en)
- Aggregate Spectral line shift Blue shift Thickness Electrochemical etching Porous materials Oxidation Photoluminescence p type semiconductor Silicon Aging
- Keyword (es)
- Agregado Grabado electroquímico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15801410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2004.01.074 
https://dx.doi.org/10.1016/j.apsusc.2004.01.074
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