Electronic structure of InP at RT, 200 and 100 K
- Autor
- ISRAEL, S1 ; SARAVANAN, R2 ; RAJARAM, R. K3
[1] Department of Physics, The American College, Madurai-625 002, India
[2] Department of Physics, The Madura College, Madurai-625 011, India
[3] School of Physics, Madurai Kamaraj University, Madurai-625 021, India - Fuente
Physica. B, Condensed matter. 2004, Vol 349, Num 1-4, pp 390-400, 11 p ; ref : 24 ref
- ISSN
- 0921-4526
- Campo Científico
- Crystallography; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- 61.10.-i 61.66.Fn 61.82.Fk 65.70.+y 71.22.+I 71.55.Eq X-ray crystallography Electronic structure III-V semiconductor InP MEM
- Palabra clave (fr)
- Composé minéral Cristallographie Densité électron Dispositif microélectromécanique Effet température Indium phosphure Liaison covalente Monocristal Méthode entropie maximum Semiconducteur III-V Structure électronique Valence In P InP
- Palabra clave (in)
- Inorganic compounds Crystallography Electron density Microelectromechanical device Temperature effects Indium phosphides Covalent bonds Monocrystals Maximum entropy methods III-V semiconductors Electronic structure Valence
- Palabra clave (es)
- Dispositivo microelectromecánico
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Disciplina
- Theoretical physics
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 15854161
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2004.04.068 
https://dx.doi.org/10.1016/j.physb.2004.04.068
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