Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si
- Author
- AURET, F. Danie1 ; DEENAPANRAY, Prakash N. K2
[1] Department of Physics, University of Pretoria, Pretoria 0002, Centre for Electronic Materials, Devices and Nanostructures, UMIST, Manchester, M60 1QD, United States
[2] Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, and Centre for Sustainable Energy Systems, Faculty of Engineering and Information Technology, The Australian National University, Canberra ACT 0200, Australia - Source
Critical reviews in solid state and materials sciences. 2004, Vol 29, Num 1, pp 1-44, 44 p ; ref : 174 ref
- CODEN
- CCRSDA
- ISSN
- 1040-8436
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Taylor & Francis, Colchester
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- deep level transient spectroscopy defects irradiation silicon
- Keyword (fr)
- Article synthèse DLTS Défaut complexe Défaut cristallin Défaut ponctuel Effet rayonnement Etat défaut Piégeage porteur charge Recuit Semiconducteur Silicium
- Keyword (en)
- Reviews DLTS Complex defect Crystal defects Point defects Radiation effects Defect states Charge carrier trapping Annealing Semiconductor materials Silicon
- Keyword (es)
- Defecto complejo Captura portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15901592
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1080/10408430490442458 
https://dx.doi.org/10.1080/10408430490442458
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Critical reviews in solid state and materials sciences\";s:9:\"\u0000*\u0000stitle\";s:33:\"Crit. rev. solid state mater. sci\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"29\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"1\";s:8:\"\u0000*\u0000epage\";s:2:\"44\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1040-8436\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"AURET\";s:10:\"\u0000*\u0000aufirst\";s:8:\"F. Danie\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:25:\"DEENAPANRAY, Prakash N. K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CCRSDA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:8:\"\u0000*\u0000place\";s:10:\"Colchester\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"44\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Critical reviews in solid state and materials sciences\";s:9:\"\u0000*\u0000stitle\";s:33:\"Crit. rev. solid state mater. sci\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"29\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"1\";s:8:\"\u0000*\u0000epage\";s:2:\"44\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1040-8436\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"AURET\";s:10:\"\u0000*\u0000aufirst\";s:8:\"F. Danie\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:25:\"DEENAPANRAY, Prakash N. K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CCRSDA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:8:\"\u0000*\u0000place\";s:10:\"Colchester\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"44\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Critical reviews in solid state and materials sciences\";s:9:\"\u0000*\u0000stitle\";s:33:\"Crit. rev. solid state mater. sci\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"29\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"1\";s:8:\"\u0000*\u0000epage\";s:2:\"44\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1040-8436\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"AURET\";s:10:\"\u0000*\u0000aufirst\";s:8:\"F. Danie\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:25:\"DEENAPANRAY, Prakash N. K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CCRSDA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:8:\"\u0000*\u0000place\";s:10:\"Colchester\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"44\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Critical reviews in solid state and materials sciences\";s:9:\"\u0000*\u0000stitle\";s:33:\"Crit. rev. solid state mater. sci\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"29\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"1\";s:8:\"\u0000*\u0000epage\";s:2:\"44\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1040-8436\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"AURET\";s:10:\"\u0000*\u0000aufirst\";s:8:\"F. Danie\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:25:\"DEENAPANRAY, Prakash N. K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CCRSDA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:8:\"\u0000*\u0000place\";s:10:\"Colchester\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"44\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1080\/10408430490442458\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Critical reviews in solid state and materials sciences\";s:9:\"\u0000*\u0000stitle\";s:33:\"Crit. rev. solid state mater. sci\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"29\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:1:\"1\";s:8:\"\u0000*\u0000epage\";s:2:\"44\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1040-8436\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"AURET\";s:10:\"\u0000*\u0000aufirst\";s:8:\"F. Danie\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:25:\"DEENAPANRAY, Prakash N. K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"CCRSDA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:88:\"Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si\";s:8:\"\u0000*\u0000place\";s:10:\"Colchester\";s:6:\"\u0000*\u0000pub\";s:16:\"Taylor & Francis\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"44\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
