Molecular memories that survive silicon device processing and real-world operation
- Author
- ZHIMING LIU1 ; YASSERI, Amir A1 ; LINDSEY, Jonathan S2 ; BOCIAN, David F1
[1] Department of Chemistry, University of California, Riverside, CA 92521-0403, United States
[2] Department of Chemistry, North Carolina State University, Raleigh, NC 27695-8204, United States - Source
Science (Washington, D.C.). 2003, Vol 302, Num 5650, pp 1543-1545, 3 p
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Atmosphère inerte Couche monomoléculaire Europium Complexe Matériau modifié Orientation cristalline Porphyrine métallique Propriété électrochimique Silicium Stockage information Zinc Complexe Lanthanide Complexe Métal transition Complexe
- Keyword (en)
- Inert atmosphere Monolayer Europium Complexes Modified material Crystal orientation Metalloporphyrin Electrochemical properties Silicon Information storage Zinc Complexes Lanthanide Complexes Transition metal Complexes
- Keyword (es)
- Atmósfera inerte Capa monomolecular Europio Complejo Material modificado Orientación cristalina Porfirina metálica Propiedad electroquímica Silicio Almacenamiento información Zinc Complejo Lantánido Complejo Metal transición Complejo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I03 Miscellaneous
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 15992716
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1090677 
https://dx.doi.org/10.1126/science.1090677
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