Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K
- Author
- GASPARI, V1 ; FOBELETS, K1 ; VELAZQUEZ-PEREZ, J. E2 ; PREST, M. J3 ; WHALL, T. E3
[1] Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road, London SW7 2BT, United Kingdom
[2] Departamento de Física Aplicada, Universidad de Salamanca, Edificio Trilingue, Pza de la Merced s/n, 37008 Salamanca, Spain
[3] Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom - Source
Semiconductor science and technology. 2004, Vol 19, Num 9, pp L95-L98 ; ref : 10 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage Ge Si Performance Propriété dynamique Semiconducteur Tension seuil Théorie classique Transconductance Transistor MOSFET 8530T Ge Si Si SiGe Composé minéral
- Keyword (en)
- Ge-Si alloys Performance Dynamic properties Semiconductor materials Threshold voltage Classical theory Transconductance MOSFET Inorganic compounds
- Keyword (es)
- Propiedad dinámica Teoría clásica Transconductancia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16068603
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/19/9/L01 
https://dx.doi.org/10.1088/0268-1242/19/9/L01
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"L95\";s:8:\"\u0000*\u0000epage\";s:3:\"L98\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"GASPARI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"FOBELETS, K\";i:1;s:21:\"VELAZQUEZ-PEREZ, J. E\";i:2;s:11:\"PREST, M. J\";i:3;s:11:\"WHALL, T. E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"L95\";s:8:\"\u0000*\u0000epage\";s:3:\"L98\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"GASPARI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"FOBELETS, K\";i:1;s:21:\"VELAZQUEZ-PEREZ, J. E\";i:2;s:11:\"PREST, M. J\";i:3;s:11:\"WHALL, T. E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"L95\";s:8:\"\u0000*\u0000epage\";s:3:\"L98\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"GASPARI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"FOBELETS, K\";i:1;s:21:\"VELAZQUEZ-PEREZ, J. E\";i:2;s:11:\"PREST, M. J\";i:3;s:11:\"WHALL, T. E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"L95\";s:8:\"\u0000*\u0000epage\";s:3:\"L98\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"GASPARI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"FOBELETS, K\";i:1;s:21:\"VELAZQUEZ-PEREZ, J. E\";i:2;s:11:\"PREST, M. J\";i:3;s:11:\"WHALL, T. E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0268-1242\/19\/9\/L01\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:9:\"\u0000*\u0000jtitle\";s:36:\"Semiconductor science and technology\";s:9:\"\u0000*\u0000stitle\";s:22:\"Semicond. sci. technol\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"L95\";s:8:\"\u0000*\u0000epage\";s:3:\"L98\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0268-1242\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:7:\"GASPARI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"V\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"FOBELETS, K\";i:1;s:21:\"VELAZQUEZ-PEREZ, J. E\";i:2;s:11:\"PREST, M. J\";i:3;s:11:\"WHALL, T. E\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"SSTEET\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:97:\"Dynamic threshold mode operation of p-channel Si and strained-SiGe mosfets between 10 K and 300 K\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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