Diffusion barrier performance of reactively sputtered Ta-W-N between Cu and Si
- Author
- YUZHANG LIU1 ; SHUANGXI SONG1 ; DALI MAO1 ; HUIQIN LING1 ; MING LI1
[1] State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiaotong University, 1954 Huashan Road, Shanghai 200030, China - Source
Microelectronic engineering. 2004, Vol 75, Num 3, pp 309-315, 7 p ; ref : 17 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Diffusion barrier Failure mechanism Resistivity Ta-W-N
- Keyword (fr)
- Analyse dommage Azote composé Barrière diffusion Composé ternaire Couche barrière Cristallisation Cuivre siliciure Cuivre Evaluation performance Fabrication microélectronique Forme onde Haute température Matériau amorphe Métallisation Pulvérisation réactive Recuit thermique Résistivité électrique Résultat expérimental Stabilité thermique Structure interface Tantale composé Tungstène composé Cu Si Ta-W-N
- Keyword (en)
- Failure analysis Nitrogen compounds Diffusion barrier Ternary compound Barrier layer Crystallization Copper silicide Copper Performance evaluation Microelectronic fabrication Waveform High temperature Amorphous material Metallizing Reactive sputtering Thermal annealing Electric resistivity Experimental result Thermal stability Interface structure Tantalum compound Tungsten compound
- Keyword (es)
- Análisis avería Compuesto nitrogenado Barrera difusión Compuesto ternario Cristalización Cobre siliciuro Cobre Evaluación prestación Fabricación microeléctrica Forma onda Alta temperatura Material amorfo Metalización Pulverización reactiva Recocido térmico Resistividad eléctrica Resultado experimental Estabilidad térmica Estructura interfaz Tantalio compuesto Wolframio compuesto
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16100130
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2004.06.002 
https://dx.doi.org/10.1016/j.mee.2004.06.002
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