Structure and scintillation properties of CsI(Tl) epitaxial layers
- Author
- ANANENKO, A1 ; FEDOROV, A1 ; MATEYCHENKO, P1 ; TARASOV, V1 ; VIDAJ, Yu1
[1] Institute for Scintillation Materials, Lenin Avenue, 61001 Kharkov, Ukraine - Source
Applied surface science. 2004, Vol 236, Num 1-4, pp 186-191, 6 p ; ref : 7 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 68.55.Jk A1. Crystal structure A3. Vapor phase epitaxy B2. Scintillator materials
- Keyword (fr)
- Composé minéral Couche épitaxique Croissance film Diffraction RX Dépôt sous vide Epitaxie phase vapeur Lithium fluorure Microscopie électronique balayage Structure cristalline F Li LiF
- Keyword (en)
- Inorganic compounds Epitaxial layers Film growth XRD Vacuum deposition VPE Lithium fluorides Scanning electron microscopy Crystal structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16100760
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2004.04.015 
https://dx.doi.org/10.1016/j.apsusc.2004.04.015
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