Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering
- Author
- HYOUN WOO KIM1 ; NAM HO KIM1
[1] School of Materials Science and Engineering, Inha University, Incheon 407-751, Korea, Republic of - Source
Applied surface science. 2004, Vol 236, Num 1-4, pp 192-197, 6 p ; ref : 22 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- GaN Room temperature Sputter Thin film ZnO
- Keyword (fr)
- Composé minéral Couche mince Couche tampon Couche épaisse Croissance film Diffraction RX Epaisseur Gallium nitrure Magnétron Métal transition composé Pulvérisation cathodique Rugosité Semiconducteur Silicium Zinc oxyde Ga N GaN O Zn Si ZnO
- Keyword (en)
- Inorganic compounds Thin films Buffer layer Thick films Film growth XRD Thickness Gallium nitrides Magnetrons Transition element compounds Cathode sputtering Roughness Semiconductor materials Silicon Zinc oxides
- Keyword (es)
- Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16100761
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2004.04.029 
https://dx.doi.org/10.1016/j.apsusc.2004.04.029
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