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Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Author
TIEN KHEE NG1 2 ; SOON FATT YOON1 2 ; WAN KHAI LOKE1 2 ; WICAKSONO, Satrio1
[1] S1-B2c-20, Clean Room/Characterisation Laboratory, School of EEE, Nanyang Technological University, Singapore 639798, Singapore
[2] Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Singapore
Source

Journal of crystal growth. 2004, Vol 270, Num 3-4, pp 351-358, 8 p ; ref : 37 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
A1. Atomic force microscopy A1. Optical microscopy A3. Molecular beam epitaxy A3. Quantum wells B1. Nitrides B2. Semiconducting III-V materials
Keyword (fr)
Anomalie Composé binaire Composé quaternaire Croissance cristalline en phase vapeur Dépendance température Epitaxie jet moléculaire Etat localisé Etude expérimentale Gallium arséniure Indium arséniure Méthode SSMBE Photoluminescence Puits quantique Recuit Semiconducteur III-V As Ga In N As Ga Equation Varshni GaAs GaInNAs Substrat GaAs Composé minéral
Keyword (en)
Anomaly Binary compounds Quaternary compounds Crystal growth from vapors Temperature dependence Molecular beam epitaxy Localized states Experimental study Gallium arsenides Indium arsenides Solid source molecular beam epitaxy Photoluminescence Quantum wells Annealing III-V semiconductors Varshni equation Inorganic compounds
Keyword (es)
Anomalía Método SSMBE
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67D Quantum wells

Pacs
7855C III-V semiconductors

Pacs
7867D Quantum wells

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16114492

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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