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Electronic switching effect and phase-change transition in chalcogenide materials

Author
REDAELLI, A1 ; PIROVANO, A2 ; PELLIZZER, F2 ; LACAITA, A. L3 ; IELMINI, D1 ; BEZ, R2
[1] Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan 20133, Italy
[2] Central Research and Development, STMicroelectronics, Agrate Brianza 20041, Italy
[3] Dipartimento di Elettronica e Informazione and with the IFN-CNR Sez. Milano, Politecnico di Milano, Milan 20133, Italy
Source

IEEE electron device letters. 2004, Vol 25, Num 10, pp 684-686, 3 p ; ref : 15 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Amorphous semiconductors chalcogenide crystal growth nonvolatile memories phase change memories (PCM)
Keyword (fr)
Chalcogénure Circuit changement phase Commutation électronique Croissance cristalline Donnée expérimentale Forme onde Matériau amorphe Mémoire non volatile Propriété matériau Résultat expérimental Semiconducteur amorphe Mémoire changement phase
Keyword (en)
Chalcogenides Phase changing circuits Electronic switching Crystal growth Experimental data Waveform Amorphous material Non volatile memory Properties of materials Experimental result Amorphous semiconductors Phase change memories
Keyword (es)
Calcogenuro Conmutación electrónica Crecimiento cristalino Dato experimental Forma onda Material amorfo Memoria no volátil Propiedad material Resultado experimental
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16170581

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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