Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- Author
- JER-HUEIH CHEN, James1 ; BOJARCZUK, Nestor A2 ; HUILING SHANG2 ; COPEL, Matthew2 ; HANNON, James B2 ; KARASINSKI, Joseph2 ; PREISLER, Edward2 ; BANERJEE, Sanjay K1 ; GUHA, Supratik2
[1] Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
[2] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States - Source
I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 9, pp 1441-1447, 7 p ; ref : 19 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Aluminum oxide Ge gate dielectrics hafnium oxide
- Keyword (fr)
- Caractéristique électrique Condensateur Couche interfaciale Couche ultramince Courant fuite Dipôle Faisceau atomique Nitruration Oxydation Pastille électronique Recuit
- Keyword (en)
- Electrical characteristic Capacitor Interfacial layer Ultrathin films Leakage current Dipole Atomic beam Nitriding Oxidation Wafer Annealing
- Keyword (es)
- Característica eléctrica Condensador Capa interfacial Corriente escape Dipolo Haz atómico Nitruración Oxidación Pastilla electrónica Recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16170795
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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