Work function tuning of fully silicided NiSi metal gates using a TiN capping layer
- Author
- SIM, J. H1 ; WEN, H. C1 ; LU, J. P; KWONG, D. L1
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, United States - Source
IEEE electron device letters. 2004, Vol 25, Num 9, pp 610-612, 3 p ; ref : 16 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Dopant TiN full silicidation metal gate work function
- Keyword (fr)
- Courant fuite Courant grille Disruption électrique Dépendance du temps Grille transistor Nickel siliciure Oxyde grille Polycristal Revêtement Siliciuration Technologie MOS complémentaire Titane nitrure Transistor grille double Travail sortie N Ti Ni Si NiSi TiN
- Keyword (en)
- Leakage current Gate current Electric breakdown Time dependence Transistor gate Nickel silicide Gate oxide Polycrystal Coatings Siliconizing Complementary MOS technology Titanium nitride Dual gate transistor Work function
- Keyword (es)
- Corriente escape Corriente rejilla Disrupción eléctrica Dependencia del tiempo Rejilla transistor Níquel siliciuro Oxido rejilla Policristal Revestimiento Siliciuración Tecnología MOS complementario Titanio nitruro Transistor de compuerta doble Función de trabajo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16170961
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2004.833840 
https://dx.doi.org/10.1109/LED.2004.833840
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