Early formation of thick diamond films on Si substrates
- Author
- ZHU, X.-D1 2 3 ; ZHOU, H.-Y2 ; ZHAN, R.-J1 2 3 ; WEN, X.-H2 ; WU, J.-X1
[1] Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
[2] Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230027, China
[3] National Key Laboratory of Material Modification by Laser, Electron, and Ion Beams, Dilian University of Technology, Dalian, China - Source
Applied surface science. 1998, Vol 136, Num 4, pp 345-348 ; ref : 6 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Croissance cristalline Diamant Dépôt chimique phase vapeur Etude expérimentale Nucléation Rayon X SEM Spectrométrie photoélectron C Substrat Si
- Keyword (en)
- Crystal growth Diamonds CVD Experimental study Nucleation X radiation SEM Photoelectron spectroscopy
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1618321
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(98)00362-6 
https://dx.doi.org/10.1016/S0169-4332(98)00362-6
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