Numerical analysis of slow current transients and power compression in GaAs FETs
- Author
- KAZAMI, Yusuke1 ; KASAI, Daisuke1 ; HORIO, Kazushige1
[1] Faculty of Systems Engineering, Shibaura Institute of Technology, Saitama 337-8570, Japan - Source
I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 11, pp 1760-1764, 5 p ; ref : 19 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Drain-lag GaAs MESFET gate-lag impact ionization power compression substrate trap surface state
- Keyword (fr)
- Analyse numérique Caractéristique courant tension Courant électrique Drain transistor Etat surface Evaluation performance Forme onde Gallium arséniure Grille transistor Ionisation choc Modèle 2 dimensions Phénomène transitoire Piégeage porteur charge Résultat expérimental Simulation numérique Substrat Tension électrique Transistor effet champ barrière Schottky Transistor effet champ As Ga GaAs
- Keyword (en)
- Numerical analysis Voltage current curve Electric current Transistor drain Surface conditions Performance evaluation Waveform Gallium arsenides Transistor gate Impact ionization Two dimensional model Transients Charge carrier trapping Experimental result Numerical simulation Substrate Voltage Metal semiconductor field effect transistor Field effect transistor
- Keyword (es)
- Análisis numérico Característica corriente tensión Corriente eléctrica Dren transistor Estado superficie Evaluación prestación Forma onda Rejilla transistor Ionización choque Modelo 2 dimensiones Fenómeno transitorio Captura portador carga Resultado experimental Simulación numérica Substrato Voltaje Transistor efecto campo barrera Schottky Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16197628
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2004.837383 
https://dx.doi.org/10.1109/TED.2004.837383
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