Two-flux composite fermion series of the fractional quantum hall states in strained Si
- Autor
- LAI, K1 ; PAN, W2 ; TSUI, D. C1 ; LYON, S1 ; MÜHLBERGER, M3 ; SCHÄFFLER, F3
[1] Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
[2] Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
[3] Institut für Halbleiterphysik, Universität Linz, Linz, Austria - Fuente
Physical review letters. 2004, Vol 93, Num 15, pp 156805.1-156805.4 ; ref : 27 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Campo Científico
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Editor
- American Physical Society, Ridge, NY
- País de la publicación
- United States
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Alliage Ge Si Couche contrainte Effet Hall quantique fractionnaire Effet champ magnétique Modèle fermion composite Niveau Landau Niveau énergie Puits quantique Silicium Si
- Palabra clave (in)
- Ge-Si alloys Strained layer Fractional quantum Hall effect Magnetic field effects Composite fermion model Landau levels Energy levels Quantum wells Silicon
- Palabra clave (es)
- Capa forzada Efecto Hall cuántico fraccionario
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40H Quantum hall effect (including fractional)
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 16211615
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.93.156805 
https://dx.doi.org/10.1103/PhysRevLett.93.156805
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