Growth kinetics of thin-film cadmium sulfide by ammonia-thiourea based CBD
- Author
- VOSS, C1 ; CHANG, Y.-J1 ; SUBRAMANIAN, S2 ; RYU, S. O1 3 ; LEE, T.-J3 ; CHANG, C.-H1
[1] Department of Chemical Engineering, Oregon State University, Corvallis, Oregon 97331, United States
[2] Department of Electrical and Computer Engineering, Oregon State University, Corvallis, Oregon 97331, United States
[3] School of Chemical Engineering and Technology, Yeungnam University, Kyongsan, 712-749, Korea, Republic of - Source
Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp C655-C660 ; ref : 16 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Ammonium hydroxyde Cadmium sulfure Contrôle cinétique Couche mince semiconductrice Dépôt électrolytique Microscopie électronique transmission Semiconducteur II-VI Solution aqueuse Thiourée Métal transition Composé
- Keyword (en)
- Ammonium hydroxides Cadmium sulfides Kinetic control Semiconductor thin films Electrodeposition Transmission electron microscopy II-VI semiconductors Aqueous solutions Thiourea Transition elements Compounds
- Keyword (es)
- Control cinético Compuesto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15P Electrodeposition, electroplating
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16227976
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.1787840 
https://dx.doi.org/10.1149/1.1787840
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