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Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT)

Author
GUPTA, Ritesh1 ; SANDEEP KUMAR AGGARWAL1 ; GUPTA, Mridula1 ; GUPTA, R. S1
[1] Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi 110 021, India
Source

Solid-state electronics. 2005, Vol 49, Num 2, pp 167-174, 8 p ; ref : 28 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Cut-off frequency Drain current Dual-channel InP based HEMT Sheet carrier density Transconductance nAlAs/InGaAs/InAlAs heterojuction
Keyword (fr)
Aluminium composé Arsenic composé Caractéristique courant tension Commande charge Commande non linéaire Courant drain Densité porteur charge Etat interface Forme onde Fréquence coupure Gallium composé Hétérojonction Indium composé Indium phosphure Modèle non linéaire Méthode analytique Niveau Fermi Niveau énergie Résultat expérimental Transistor mobilité électron élevée Al As In As Ga In In P InAlAs InGaAs InP
Keyword (en)
Aluminium compound Arsenic compound Voltage current curve Load control Non linear control Drain current Charge carrier density Interface state Waveform Cut off frequency Gallium compound Heterojunction Indium compound Indium phosphide Non linear model Analytical method Fermi level Energy level Experimental result High electron mobility transistor
Keyword (es)
Aluminio compuesto Arsénico compuesto Característica corriente tensión Control carga Control no lineal Corriente dren Concentración portador carga Estado interfase Forma onda Frecuencia corte Galio compuesto Heterounión Indio compuesto Indio fosfuro Modelo no lineal Método analítico Nivel Fermi Nivel energía Resultado experimental Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16301891

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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