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Low-field diffusion magnetothermopower of a high-mobility two-dimensional electron gas

Author
MAXIMOV, S1 ; GBORDZOE, M1 ; BUHMANN, H1 ; MOLENKAMP, L. W1 ; REUTER, D2
[1] Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
[2] Lehrstuhl für Festkorperphysik, Ruhr-Universität Bochum, Universitätstrasse 150, 44801 Bochum, Germany
Source

Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 12, pp 121308.1-121308.4 ; ref : 21 ref

ISSN
1098-0121
Scientific domain
Metallurgy, welding; Condensed state physics
Publisher
American Physical Society, Ridge, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Effet Hall Effet Nernst Ettingshausen Effet Shubnikov de Haas Effet champ magnétique Gallium arséniure Gaz électron 2 dimensions Hétérostructure Mobilité porteur charge Niveau Landau Oscillation Pouvoir thermoélectrique Semiconducteur 7363 As Ga GaAs Composé minéral
Keyword (en)
Hall effect Nernst Ettingshausen effect Shubnikov-de Haas effect Magnetic field effects Gallium arsenides Two-dimensional electron gas Heterostructures Carrier mobility Landau levels Oscillations Thermoelectric power Semiconductor materials Inorganic compounds
Keyword (es)
Efecto Nernst Ettingshausen
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16305008

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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