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Structural, electrical, and photoelectrical properties of CdxPb1-xS thin films prepared by chemical bath deposition

Author
PENTIA, E1 ; DRAGHICI, V1 ; SARAU, G1 ; MEREU, B1 ; PINTILIE, L1 ; SAVA, F1 ; POPESCU, M1
[1] National Institute of Materials Physics, 77125 Bucharest-Magurele, Romania
Source

Journal of the Electrochemical Society. 2004, Vol 151, Num 11, pp G729-G733 ; ref : 22 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Cadmium sulfure Composé insertion Composé ternaire Conductivité électrique Couche mince semiconductrice Courant photoélectrique Dépôt bain chimique Etude expérimentale Plomb sulfure Propriété électrique Semiconducteur II-VI Structure surface Cd Pb S Cd(x)Pb(1-x)S Métal transition Composé
Keyword (en)
Cadmium sulfides Intercalation compounds Ternary compounds Electrical conductivity Semiconductor thin films Photocurrents Chemical bath deposition Experimental study Lead sulfides Electrical properties II-VI semiconductors Surface structure Transition elements Compounds
Keyword (es)
Depósito baño químico Compuesto
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61G Ii-vi semiconductors

Pacs
7361G II-VI semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16308611

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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