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Surface modification of indium-tin-oxide anode by oxygen plasma for organic electroluminescent devices

Author
ZHONG ZHI YOU1 ; JIANG YA DONG1 ; SHI DU FANG2
[1] School of Optoelectric Information, University of Electronic Science and Technology of China, Chengdu 610054, China
[2] Department of Physics, School of Science, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, China
Source

Physica status solidi. A. Applied research. 2004, Vol 201, Num 14, pp 3221-3227, 7 p ; ref : 24 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Composition chimique Composé minéral Diode électroluminescente Durée vie Electroluminescence Indium Métal transition composé Optimisation Performance Propriété surface Stockage hydrogène Titane nitrure Traitement chimique Traitement par plasma Traitement surface Travail sortie Vieillissement 78 8560J In
Keyword (en)
Chemical composition Inorganic compounds Light emitting diodes Lifetime Electroluminescence Indium Transition element compounds Optimization Performance Surface properties Hydrogen storage Titanium nitrides Chemical treatment Plasma assisted processing Surface treatments Work functions Aging
Keyword (es)
Tratamiento químico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16319165

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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