Electronic structures of filled tetrahedral semiconductors LiMgN and LiZnN: conduction band distortion
- Author
- YU, L. H1 ; YAO, K. L1 2 ; LIU, Z. L1
[1] Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, WuHan 430074, China
[2] International Center of Materials Physics, Chinese Academy of Science, ShengYang 110015, China - Source
Physica. B, Condensed matter. 2004, Vol 353, Num 3-4, pp 278-286, 9 p ; ref : 28 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 31.15.Ew FP-LAPW method 71.20.-b 71.20.Nr Conduction band Direct and indirect band gap Semiconductor
- Keyword (fr)
- Calcul APW Energie totale Liaison covalente Liaison ionique Méthode fonctionnelle densité Nitrure Semiconducteur Structure bande Structure électronique Zone Brillouin Ga N GaN Zn Composé minéral Métal transition
- Keyword (en)
- APW calculations Total energy Covalent bonds Ionic bonds Density functional method Nitrides Semiconductor materials Band structure Electronic structure Brillouin zones Inorganic compounds Transition elements
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A20 Electron density of states and band structure of crystalline solids / 001B70A20N Semiconductor compounds
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16333390
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2004.10.008 
https://dx.doi.org/10.1016/j.physb.2004.10.008
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