RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz
- Author
- DUMKA, D. C1 ; LEE, C1 ; TSERNG, H. Q1 ; SAUNIER, P1
[1] R&D Engineering, TriQuint Semiconductor Texas, PO Box 833938, Richardson, TX 75083, United States - Source
Electronics Letters. 2004, Vol 40, Num 24, pp 1554-1556, 3 p ; ref : 7 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé ternaire Contrainte électrique Courant drain Courant grille Epitaxie jet moléculaire Evaluation performance Fabrication microélectronique Fiabilité Gallium nitrure Puissance sortie Radiofréquence Transistor mobilité électron élevée Al Ga N AlGaN Ga N GaN
- Keyword (en)
- Aluminium nitride Binary compound Ternary compound Electric stress Drain current Gate current Molecular beam epitaxy Performance evaluation Microelectronic fabrication Reliability Gallium nitride Output power Radiofrequency High electron mobility transistor
- Keyword (es)
- Aluminio nitruro Compuesto binario Compuesto ternario Tensión eléctrica Corriente dren Corriente rejilla Evaluación prestación Fabricación microeléctrica Fiabilidad Galio nitruro Potencia salida Radiofrecuencia Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16349051
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:20046746 
https://dx.doi.org/10.1049/el:20046746
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