Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers : Nanoelectronics
- Author
- JI, L. W1 2 ; SU, Y. K1 ; CHANG, S. J1 ; HUNG, S. C1 ; CHANG, C. S1 ; WU, L. W1
[1] Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Province of China
[2] Kao Yuan Institute of Technology, Lu-Chu 821, Taiwan, Province of China - Source
IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 5, pp 486-488, 3 p ; ref : 23 ref
- ISSN
- 1350-2409
- Scientific domain
- Electronics
- Publisher
- Institution of Electrical Engineers, Stevenage
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique courant tension Composé ternaire Couche active Couche autoassemblée Couche nitrurée Courant injection Diode électroluminescente Etude expérimentale Fabrication microélectronique Forme onde Gallium nitrure Indium nitrure Lumière bleue Méthode MOCVD Nanostructure Nanotechnologie Niveau profond Point quantique Porteur charge Puits quantique Résultat expérimental Ga In N Ga N GaN InGaN
- Keyword (en)
- Voltage current curve Ternary compound Active layer Self-assembled layer Nitrided layer Injection current Light emitting diode Experimental study Microelectronic fabrication Waveform Gallium nitride Indium nitride Blue light MOCVD Nanostructure Nanotechnology Deep level Quantum dot Charge carrier Quantum well Experimental result
- Keyword (es)
- Característica corriente tensión Compuesto ternario Capa activa Capa autoensamblada Capa nitrurada Corriente inyección Diodo electroluminescente Estudio experimental Fabricación microeléctrica Forma onda Galio nitruro Indio nitruro Luz azul Nanoestructura Nanotecnología Nivel profundo Punto cuántico Portador carga Pozo cuántico Resultado experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16357673
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/ip-cds:20040997 
https://dx.doi.org/10.1049/ip-cds:20040997
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