New crystalline silicon ribbon materials for photovoltaics
- Author
- HAHN, G1 ; SCHÖNECKER, A2
[1] Department of Physics, University of Konstanz, Jakob-Burckhardt-Strasse 29, 78457 Konstanz, Germany
[2] ECN Solar Energy, PO Box 1, 1755ZG Petten, Netherlands - Source
Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 50, pp R1615-R1648 ; ref : 176 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Carbone Cinétique Durée vie porteur charge Défaut complexe Défaut cristallin Effet photovoltaïque Epaisseur Etat fondu Hydrogénation Interaction défaut cristallin Liaison chimique Lingot Non stoechiométrie Polycristal Silicium Sorption getter Structure défaut 8460J C Si
- Keyword (en)
- Carbon Kinetics Carrier lifetime Complex defect Crystal defects Photovoltaic effects Thickness Melts Hydrogenation Crystal defect interaction Chemical bonds Ingot Nonstoichiometry Polycrystals Silicon Gettering Defect structure
- Keyword (es)
- Defecto complejo Interacción defecto cristalino Lingote
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16357782
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/16/50/R03 
https://dx.doi.org/10.1088/0953-8984/16/50/R03
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