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Application of the Taguchi's design of experiments to optimize a bromine chemistry-based etching recipe for deep silicon trenches

Author
PING HSUN CHEN1 2 ; YAU, Colin2 ; KUANG YUNG WU2 ; LIN, Steeve2 ; HAN CHANG SHIH1
[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Province of China
[2] Mosel Vitelic Inc., Science Based Industrial Park, No. 19, Li Hsin Road, Hsinchu 300, Taiwan, Province of China
Source

Microelectronic engineering. 2005, Vol 77, Num 2, pp 110-115, 6 p ; ref : 6 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Dry etching Hydrogen bromine Silicon Taguchi method
Keyword (fr)
Etude expérimentale Fabrication microélectronique Gravure sèche Hydrogène bromure Méthode Taguchi Méthode optimisation Niveau profond Plan expérience Propriété chimique Résultat expérimental Silicium Technologie tranchée Vitesse gravure
Keyword (en)
Experimental study Microelectronic fabrication Dry etching Hydrogen bromide Taguchi method Optimization method Deep level Experimental design Chemical properties Experimental result Silicon Trench technology Etching rate
Keyword (es)
Estudio experimental Fabricación microeléctrica Grabado seco Hidrógeno bromuro Método Taguchi Método optimización Nivel profundo Plan experiencia Propiedad química Resultado experimental Silicio Tecnología trinchera Velocidad grabado
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16369338

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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