Application of the Taguchi's design of experiments to optimize a bromine chemistry-based etching recipe for deep silicon trenches
- Author
- PING HSUN CHEN1 2 ; YAU, Colin2 ; KUANG YUNG WU2 ; LIN, Steeve2 ; HAN CHANG SHIH1
[1] Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Province of China
[2] Mosel Vitelic Inc., Science Based Industrial Park, No. 19, Li Hsin Road, Hsinchu 300, Taiwan, Province of China - Source
Microelectronic engineering. 2005, Vol 77, Num 2, pp 110-115, 6 p ; ref : 6 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Dry etching Hydrogen bromine Silicon Taguchi method
- Keyword (fr)
- Etude expérimentale Fabrication microélectronique Gravure sèche Hydrogène bromure Méthode Taguchi Méthode optimisation Niveau profond Plan expérience Propriété chimique Résultat expérimental Silicium Technologie tranchée Vitesse gravure
- Keyword (en)
- Experimental study Microelectronic fabrication Dry etching Hydrogen bromide Taguchi method Optimization method Deep level Experimental design Chemical properties Experimental result Silicon Trench technology Etching rate
- Keyword (es)
- Estudio experimental Fabricación microeléctrica Grabado seco Hidrógeno bromuro Método Taguchi Método optimización Nivel profundo Plan experiencia Propiedad química Resultado experimental Silicio Tecnología trinchera Velocidad grabado
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16369338
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2004.09.001 
https://dx.doi.org/10.1016/j.mee.2004.09.001
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