Observation of the spin Hall effect in semiconductors
- Author
- KATO, Y. K1 ; MYERS, R. C1 ; GOSSARD, A. C1 ; AWSCHALOM, D. D1
[1] Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, United States - Source
Science (Washington, D.C.). 2004, Vol 306, Num 5703, pp 1910-1913, 4 p
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Composé ternaire Contrainte mécanique Couche mince Couche épitaxique Effet Hall Effet Kerr Gallium arséniure Image Indium arséniure Microscopie Orientation cristalline Polarisation spin Semiconducteur Transport polarisé en spin Effet Hall spin
- Keyword (en)
- Binary compounds Ternary compounds Mechanical stress Thin films Epitaxial layers Hall effect Kerr effect Gallium arsenides Images Indium arsenides Microscopy Crystal orientation Spin polarization Semiconductor materials Spin polarized transport Spin Hall effect
- Keyword (es)
- Tensión mecánica Polarización spin
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B25 Spin polarized transport
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40H Quantum hall effect (including fractional)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16380431
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1105514 
https://dx.doi.org/10.1126/science.1105514
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