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Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

Author
MNATSAKANOV, T. T1 ; LEVINSHTEIN, M. E2 ; IVANOV, P. A2 ; PALMOUR, J. W3 ; DAS, M3 ; AGARWAL, A. K3
[1] All-Russia Electrotechnical Institute, Moscow 111250, Russian Federation
[2] Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russian Federation
[3] CREE Inc., 4600 Silicon Dr., Durham NC 27703, United States
Source

Semiconductor science and technology. 2005, Vol 20, Num 1, pp 62-67, 6 p ; ref : 22 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
Russian
Keyword (fr)
Composé minéral Densité Dopage Modulation Phénomène critique Silicium carbure Simulation ordinateur C Si SiC
Keyword (en)
Inorganic compounds Density Doping Modulation Critical phenomena Silicon carbides Computerized simulation
Keyword (es)
Doping
Classification
Pascal
001 Exact sciences and technology / 001B Physics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics

Discipline
Electronics Theoretical physics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16386867

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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