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Pulsed laser deposition of InP thin films on sapphire(1 0 0 0) and GaAs(1 0 0)

Author
HAFEZ, M. A1 ; ELAMRAWI, K. A1 ; ELSAYED-ALI, H. E1
[1] Department of Electrical and Computer Engineering and the Applied Research Center Old Dominion University, 231 Kaufman Hall, Norfolk, VA 23529, United States
Source

Applied surface science. 2004, Vol 239, Num 1, pp 36-44, 9 p ; ref : 29 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
AFM GaAs InP Pulsed laser deposition RHED SEM Sapphire
Keyword (fr)
Composé binaire Couche mince Croissance film Dépôt laser pulsé Indium phosphure Microscopie force atomique Microscopie électronique balayage RHEED Semiconducteur Structure surface Structure îlot Composé minéral In P InP
Keyword (en)
Binary compounds Thin films Film growth Pulsed laser deposition Indium phosphides Atomic force microscopy Scanning electron microscopy RHEED Semiconductor materials Surface structure Island structure
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition

Pacs
6855J Structure and morphology; thickness

Pacs
8115F Laser deposition

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16407727

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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