Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
- Author
- ZHENG, Z. W1 2 ; SHEN, B1 ; GUO, S. L2 ; CHU, J. H2 ; HOSHINO, K3 ; ARAKAWA, Y3 ; QIU, Z. J2 ; GUI, Y. S2 ; TANG, N1 ; LIU, J1 ; CHEN, D. J1 ; ZHANG, R1 ; SHI, Y1 ; ZHENG, Y. D1
[1] Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
[2] National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
[3] Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan - Source
Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 1, pp 39-42, 4 p ; ref : 18 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé ternaire Dopage modulé Gallium nitrure Indium nitrure Magnétorésistance Phénomène transport Puits quantique Semiconducteur Sous bande Transport quantique Al Ga N AlxGa1-xN Ga N GaN Composé minéral
- Keyword (en)
- Aluminium nitrides Binary compounds Ternary compounds Modulation doping Gallium nitrides Indium nitrides Magnetoresistance Transport processes Quantum wells Semiconductor materials Subband Quantum transport Inorganic compounds
- Keyword (es)
- Doping modulado Subbanda Transporte cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures / 001B70C63H Quantum wells
- Pacs
- 7363H Quantum wells
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16450038
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/s00339-004-2928-z 
https://dx.doi.org/10.1007/s00339-004-2928-z
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"80\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:13:{i:0;s:7:\"SHEN, B\";i:1;s:9:\"GUO, S. L\";i:2;s:9:\"CHU, J. H\";i:3;s:10:\"HOSHINO, K\";i:4;s:10:\"ARAKAWA, Y\";i:5;s:9:\"QIU, Z. J\";i:6;s:9:\"GUI, Y. S\";i:7;s:7:\"TANG, N\";i:8;s:6:\"LIU, J\";i:9;s:10:\"CHEN, D. J\";i:10;s:8:\"ZHANG, R\";i:11;s:6:\"SHI, Y\";i:12;s:11:\"ZHENG, Y. D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"80\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:13:{i:0;s:7:\"SHEN, B\";i:1;s:9:\"GUO, S. L\";i:2;s:9:\"CHU, J. H\";i:3;s:10:\"HOSHINO, K\";i:4;s:10:\"ARAKAWA, Y\";i:5;s:9:\"QIU, Z. J\";i:6;s:9:\"GUI, Y. S\";i:7;s:7:\"TANG, N\";i:8;s:6:\"LIU, J\";i:9;s:10:\"CHEN, D. J\";i:10;s:8:\"ZHANG, R\";i:11;s:6:\"SHI, Y\";i:12;s:11:\"ZHENG, Y. D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"80\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:13:{i:0;s:7:\"SHEN, B\";i:1;s:9:\"GUO, S. L\";i:2;s:9:\"CHU, J. H\";i:3;s:10:\"HOSHINO, K\";i:4;s:10:\"ARAKAWA, Y\";i:5;s:9:\"QIU, Z. J\";i:6;s:9:\"GUI, Y. S\";i:7;s:7:\"TANG, N\";i:8;s:6:\"LIU, J\";i:9;s:10:\"CHEN, D. J\";i:10;s:8:\"ZHANG, R\";i:11;s:6:\"SHI, Y\";i:12;s:11:\"ZHENG, Y. D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"80\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:13:{i:0;s:7:\"SHEN, B\";i:1;s:9:\"GUO, S. L\";i:2;s:9:\"CHU, J. H\";i:3;s:10:\"HOSHINO, K\";i:4;s:10:\"ARAKAWA, Y\";i:5;s:9:\"QIU, Z. J\";i:6;s:9:\"GUI, Y. S\";i:7;s:7:\"TANG, N\";i:8;s:6:\"LIU, J\";i:9;s:10:\"CHEN, D. J\";i:10;s:8:\"ZHANG, R\";i:11;s:6:\"SHI, Y\";i:12;s:11:\"ZHENG, Y. D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s00339-004-2928-z\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:9:\"\u0000*\u0000jtitle\";s:58:\"Applied physics. A, Materials science & processing (Print)\";s:9:\"\u0000*\u0000stitle\";s:43:\"Appl. phys., A Mater. sci. process. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"80\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"39\";s:8:\"\u0000*\u0000epage\";s:2:\"42\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0947-8396\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHENG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. W\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:13:{i:0;s:7:\"SHEN, B\";i:1;s:9:\"GUO, S. L\";i:2;s:9:\"CHU, J. H\";i:3;s:10:\"HOSHINO, K\";i:4;s:10:\"ARAKAWA, Y\";i:5;s:9:\"QIU, Z. J\";i:6;s:9:\"GUI, Y. S\";i:7;s:7:\"TANG, N\";i:8;s:6:\"LIU, J\";i:9;s:10:\"CHEN, D. J\";i:10;s:8:\"ZHANG, R\";i:11;s:6:\"SHI, Y\";i:12;s:11:\"ZHENG, Y. D\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:93:\"Quantum and transport scattering times in modulation-doped AlxGa1-xN\/GaN single quantum wells\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
