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Synthesis and characterization of ultra-long silica nanowires

Author
FANG, X. S1 ; YE, C. H1 ; XIE, T1 ; HE, G1 ; WANG, Y. H1 ; ZHANG, L. D1
[1] Key Laboratory of Materials Physics, Institute of Solid Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, China
Source

Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 2, pp 423-425, 3 p ; ref : 17 ref

ISSN
0947-8396
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Springer, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Défaut Dépôt phase vapeur Etat amorphe Microscopie électronique balayage Nanofil Photoluminescence Silicium oxyde Spectre photoélectron RX Synthèse 7867 Al O Al2O3 O Si Si SiO2 Composé minéral
Keyword (en)
Defects Vapor deposition Amorphous state Scanning electron microscopy Nanowires Photoluminescence Silicon oxides X-ray photoelectron spectra Synthesis Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16450107

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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